Scaled Silicon Carbide on Insulator for Quantum Applications
ID: AF251-D026Type: Phase II
Overview

Topic

Scaled Silicon Carbide on Insulator for Quantum Applications

Agency

Agency: DODBranch: USAF

Program

Type: SBIRPhase: Phase II

Topic Link

https://www.dodsbirsttr.mil/topics-app/

Additional Information

https://www.dodsbirsttr.mil/topics-app/
Timeline
    Description

    The United States Air Force (USAF) is seeking proposals for the development of wafer-scale, quantum-grade silicon carbide on insulator (SiC-OI) as part of its Small Business Innovation Research (SBIR) program. The objective is to produce at least 100 millimeter wafers with stringent specifications, including sub-micron device layer thickness and total thickness variation below 20 nanometers, to support next-generation integrated quantum photonics technologies. This initiative is crucial for advancing quantum applications, as it aims to enhance material quality and production scalability beyond current capabilities. Interested parties should prepare to submit their proposals by February 5, 2025, with the opportunity being pre-released on December 4, 2024. For more details, visit the official solicitation page at https://www.dodsbirsttr.mil/topics-app/.

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