RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic

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This government Request for Proposal (RFP) DMEA254-P001, “RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic,” seeks to design, develop, and demonstrate a low-noise amplifier (LNA) and power amplifier (PA) utilizing GlobalFoundries (GF) 200-mm Gallium Nitride on Silicon (130RFG1) technology. The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The RFP addresses the current lack of integrated monolithic 200-mm GaN-on-Si technology solutions for scaled integration of PAs and LNAs. GaN-on-Si offers superior physical properties, such as higher electron mobility, current density, breakdown voltages, and power efficiency, compared to traditional silicon-based technologies, leading to significant advantages in size, weight, area, and power (SWaP). Phase I requires demonstrating feasibility through design, simulation, and assessment of process and models, while Phase II focuses on fabricating and testing functional prototypes, with contractors needing to be a DMEA accredited Trusted Supplier. Phase III outlines opportunities for further refinement, integration into military applications like radar, communications, sensors, and electronic warfare, and commercialization.

The DMEA254-P001 RFP seeks proposals for designing, developing, and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) using GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for military and commercial applications, addressing the current lack of monolithic 200-mm GaN-on-Si solutions for scaled integration. Phase I requires demonstrating feasibility through design, simulation, and assessment of process, models, and design kits, comparing performance to state-of-the-art. Phase II focuses on designing, fabricating, packaging, and testing functional LNA and PA prototypes, with the contractor delivering samples, test boards, and comprehensive reports to the USG. The contractor must be a DMEA-accredited Trusted Supplier or have successful product sales in the RF market. Phase III aims for further development and integration of the technology into specific military applications like radar and electronic warfare, supporting USG test and validation for field use. Access to the designed IP will be made available to the Defense Industrial Base (DIB) or commercial partners with a licensing fee under $50k.

The DMEA254-P001 RFP seeks proposals for designing and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) using commercially available GlobalFoundries 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project aims to address the current lack of monolithic 200-mm GaN-on-Si solutions for scaled integration in RF frontend (RFE) circuitry, leveraging GaN's superior physical properties for higher output power, efficiency, and reduced size, weight, area, and power (SWaP). Phase I focuses on feasibility, simulation, and design approaches, while Phase II involves the design, development, fabrication, and testing of functional prototypes, with the contractor required to be a DMEA accredited Trusted Supplier. Phase III will explore dual-use applications in military radar, communications, sensors, and electronic warfare, with opportunities for commercialization. The USG will provide access to silicon space via GlobalFoundries MPW/Shuttle run.

This government RFP, DMEA254-P001, seeks proposals for designing, developing, and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) using GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project addresses the current lack of monolithic 200-mm GaN-on-Si solutions for scaled integration of PAs and LNAs, leveraging GaN's superior physical properties over silicon. Phase I requires demonstrating feasibility through design, simulation, and assessment of the technology's integration impacts. Phase II involves the design, development, fabrication, and testing of functional LNA and PA prototypes by DMEA-accredited trusted suppliers, with deliverables including detailed reports, design collaterals, and samples to the U.S. Government. Phase III focuses on refining designs and integrating the technology into specific military applications like radar, communications, and electronic warfare, with opportunities for commercialization. Access to silicon space via a GlobalFoundries MPW/Shuttle run will be provided as Government Furnished Equipment.

This RFP seeks proposals for designing, developing, and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) using GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for military and commercial applications. The project aims to address the current lack of monolithic GaN-on-Si solutions for scaled integration in RF frontend (RFE) circuitry. Phase I focuses on feasibility, process evaluation, and design simulations, while Phase II involves fabricating and testing functional LNA and PA prototypes, with DMEA accreditation required for contractors. Phase III will focus on further refinement, integration into military applications, and commercialization opportunities. The project emphasizes leveraging GaN's superior physical properties for high output power and efficiency, leading to advancements in radar, communications, sensors, and electronic warfare.

This government RFP, DMEA254-P001, seeks proposals for the design, development, and demonstration of a low-noise amplifier (LNA) and power amplifier (PA) utilizing GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project addresses the current lack of monolithic 200-mm GaN-on-Si integrated solutions for PAs and LNAs, leveraging GaN's superior properties like high electron mobility, current density, wide bandgap, and breakdown voltage for improved RF performance and power efficiency. Phase I requires a feasibility study, design evaluation, and proposed development activities, including packaging and testing. Phase II involves the design, fabrication, and testing of functional LNA and PA prototypes by a DMEA-accredited Trusted Supplier, with deliverables including samples, test data, and design collateral to the USG. Phase III focuses on further refining designs and integrating the technology into specific military applications such as radar, communications, sensors, and electronic warfare, supporting USG validation and field deployment. The program emphasizes dual-use applications and requires contractors to make designed IP accessible to the Defense Industrial Base (DIB) or commercial partners with a licensing fee under $50k per instantiation.

This government RFP, DMEA254-P001, seeks proposals for designing, developing, and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) using GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project addresses the current lack of monolithic 200-mm GaN-on-Si solutions for scaled integration of PAs and LNAs, leveraging GaN's superior physical properties for higher performance and efficiency compared to traditional silicon-based technologies. Phase I requires demonstrating feasibility through design, simulation, and assessment of the GaN-on-Si process, models, and components, along with proposing packaging and testing activities. Phase II involves DMEA-accredited contractors designing, fabricating, and characterizing functional LNA and PA prototypes that meet DMEA specifications for dual-use applications, with deliverables including detailed reports, design collaterals, and access to intellectual property. Phase III focuses on further refining designs and integrating the technology into specific military applications like radar, communications, and electronic warfare, supporting field use transition.

This government RFP, DMEA254-P001, seeks proposals for designing, developing, and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) utilizing commercially available GlobalFoundries 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project addresses the current lack of monolithic 200-mm GaN-on-Si technology solutions for scaled integration of RF frontend (RFE) circuitry, leveraging GaN's superior physical properties for high output power and efficiency. Phase I requires demonstrating feasibility through design, simulation, and assessment of the GaN-on-Si technology, including design flow, architecture, and integration impacts. Phase II focuses on designing, fabricating, packaging, and testing functional LNA and PA prototypes, with specific performance requirements and delivery of design collaterals to the US Government. Phase III involves further refining designs and integrating the technology into military applications like radar, communications, sensors, and electronic warfare, with opportunities for commercialization.

This RFP, DMEA254-P001, seeks proposals for designing, developing, and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) utilizing GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) 130RFG1 technology. The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project aims to address the current lack of monolithic 200-mm GaN-on-Si solutions for scaled integration of RF frontend (RFE) circuitry, leveraging GaN's superior properties like higher electron mobility, current density, and wide bandgap for improved RF performance, power delivery, and efficiency. Phase I focuses on feasibility studies, design approaches, and simulation of the integrated LNA and PA, including assessments of noise, isolation, electromigration, and thermal effects. Phase II requires the contractor to be a DMEA accredited Trusted Supplier, or have successful product sales in the RF market, and involves fabricating, packaging, characterizing, and testing a functional LNA and PA. Deliverables include functional prototypes, test boards, detailed reports, design collaterals, and intellectual property access for the Defense Industrial Base (DIB). Phase III will focus on refining designs and integrating the technology into specific military applications such as radar, communications, sensors, and electronic warfare, while also pursuing commercial opportunities.

This RFP seeks proposals for designing, developing, and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) using GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for military and commercial applications. The project aims to address the current lack of monolithic 200-mm GaN-on-Si solutions for scaled integration of PAs and LNAs. Phase I requires demonstrating feasibility through design, simulation, and assessment of the technology, including integration impacts and proposing future development activities. Phase II involves DMEA-accredited contractors designing, fabricating, packaging, and testing functional LNA and PA prototypes, delivering samples and comprehensive technical documentation to the USG. It also mandates making the Intellectual Property accessible to the Defense Industrial Base (DIB) with a licensing fee under $50k. Phase III focuses on refining designs and integrating the technology into specific military applications like radar, communications, and electronic warfare, supporting validation and field deployment.

This government RFP, DMEA254-P001, seeks proposals for the design, development, and demonstration of a low-noise amplifier (LNA) and power amplifier (PA) utilizing GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project aims to address the current lack of monolithic 200-mm GaN-on-Si integrated solutions for PAs and LNAs, leveraging GaN's superior physical properties for higher output power and efficiency. Phase I requires demonstrating feasibility through design, simulation, and assessment of the technology, while Phase II focuses on fabricating and testing functional prototypes, with the contractor needing to be a DMEA accredited Trusted Supplier. Phase III involves further refinement and integration of the technology into specific military and commercial applications. The US Government will provide access to silicon space via a GlobalFoundries MPW/Shuttle run.

This government Request for Proposal (RFP) DMEA254-P001 seeks the design, development, and demonstration of a low-noise amplifier (LNA) and power amplifier (PA) utilizing GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for military and commercial applications. The RFP addresses the current lack of monolithic 200-mm GaN-on-Si integrated solutions for scaled integration of PAs and LNAs, despite the superior physical properties of GaN for RF systems. Phase I requires demonstrating feasibility through design, simulation, and assessment of the technology, while Phase II involves the design, development, fabrication, and testing of functional LNA and PA prototypes by a DMEA accredited Trusted Supplier. Phase III focuses on refining designs and integrating the technology into specific military applications, including radar, communications, sensors, and electronic warfare.

This government RFP, DMEA254-P001, seeks proposals for the design, development, and demonstration of a low-noise amplifier (LNA) and power amplifier (PA) utilizing GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project addresses the current lack of monolithic 200-mm GaN-on-Si solutions for scaled integration of PAs and LNAs, leveraging GaN's superior physical properties for RF performance. Phase I requires demonstrating feasibility through design, simulation, and assessment of the technology, including integration impacts and packaging proposals. Phase II mandates a DMEA-accredited contractor to design, fabricate, and test functional LNA and PA prototypes, delivering samples, test boards, and detailed reports to the USG, with provisions for DIB access to intellectual property. Phase III focuses on refining designs and integrating the technology into specific military applications like radar, communications, and electronic warfare, supporting validation for field use.

The DMEA254-P001 RFP seeks the design, development, and demonstration of a low-noise amplifier (LNA) and power amplifier (PA) utilizing commercially available GlobalFoundries 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project aims to address the current lack of monolithic 200-mm GaN-on-Si technology solutions for scaled integration of PAs and LNAs. GaN-on-Si offers superior physical properties, enabling higher output power, breakdown voltages, and power efficiency compared to silicon-based technologies, ultimately improving size, weight, area, and power (SWaP) characteristics. Phase I focuses on demonstrating feasibility through design, simulation, and assessment of the technology, while Phase II involves the fabrication, testing, and characterization of functional LNA and PA prototypes by a DMEA accredited Trusted Supplier. Phase III will explore further refinement and integration of the technology into specific military applications such as radar, communications, sensors, and electronic warfare, alongside commercial opportunities.