RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic
ID: DMEA254-P001Type: BOTH
Overview

Topic

RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic

Agency

Agency: DODBranch: DMEA

Program

Type: SBIRPhase: BOTH

Topic Link

https://www.dodsbirsttr.mil/topics-app/

Additional Information

https://www.dodsbirsttr.mil/topics-app/
Timeline
    Description

    The Department of Defense, through the Defense Microelectronics Activity (DMEA), is seeking proposals for the design, development, and demonstration of a low-noise amplifier (LNA) and power amplifier (PA) utilizing commercially available GlobalFoundries 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology. The primary objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications, addressing the current lack of integrated 200-mm GaN-on-Si technology solutions for RF frontend circuitry. This initiative leverages GaN's superior physical properties to achieve high output power and efficiency, with a structured approach across three phases: Phase I focuses on feasibility studies and design assessments, Phase II involves the fabrication and testing of prototypes, and Phase III aims to refine designs for military applications such as radar and communications. Interested parties should note that the solicitation is set to open on November 19, 2025, with proposals due by December 10, 2025, and can find more information at the provided source link.

    Files
    Title
    Posted
    1762382888436.pdf
    This government Request for Proposal (RFP) DMEA254-P001, “RF Frontend Design (RFE) on Gallium Nitride on Silicon (GaN-on-Si) Open Topic,” seeks to design, develop, and demonstrate a low-noise amplifier (LNA) and power amplifier (PA) utilizing GlobalFoundries (GF) 200-mm Gallium Nitride on Silicon (130RFG1) technology. The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The RFP addresses the current lack of integrated monolithic 200-mm GaN-on-Si technology solutions for scaled integration of PAs and LNAs. GaN-on-Si offers superior physical properties, such as higher electron mobility, current density, breakdown voltages, and power efficiency, compared to traditional silicon-based technologies, leading to significant advantages in size, weight, area, and power (SWaP). Phase I requires demonstrating feasibility through design, simulation, and assessment of process and models, while Phase II focuses on fabricating and testing functional prototypes, with contractors needing to be a DMEA accredited Trusted Supplier. Phase III outlines opportunities for further refinement, integration into military applications like radar, communications, sensors, and electronic warfare, and commercialization.
    1762387305514.pdf
    The DMEA254-P001 RFP seeks proposals for designing, developing, and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) using GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for military and commercial applications, addressing the current lack of monolithic 200-mm GaN-on-Si solutions for scaled integration. Phase I requires demonstrating feasibility through design, simulation, and assessment of process, models, and design kits, comparing performance to state-of-the-art. Phase II focuses on designing, fabricating, packaging, and testing functional LNA and PA prototypes, with the contractor delivering samples, test boards, and comprehensive reports to the USG. The contractor must be a DMEA-accredited Trusted Supplier or have successful product sales in the RF market. Phase III aims for further development and integration of the technology into specific military applications like radar and electronic warfare, supporting USG test and validation for field use. Access to the designed IP will be made available to the Defense Industrial Base (DIB) or commercial partners with a licensing fee under $50k.
    1762560122046.pdf
    The DMEA254-P001 RFP seeks proposals for designing and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) using commercially available GlobalFoundries 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project aims to address the current lack of monolithic 200-mm GaN-on-Si solutions for scaled integration in RF frontend (RFE) circuitry, leveraging GaN's superior physical properties for higher output power, efficiency, and reduced size, weight, area, and power (SWaP). Phase I focuses on feasibility, simulation, and design approaches, while Phase II involves the design, development, fabrication, and testing of functional prototypes, with the contractor required to be a DMEA accredited Trusted Supplier. Phase III will explore dual-use applications in military radar, communications, sensors, and electronic warfare, with opportunities for commercialization. The USG will provide access to silicon space via GlobalFoundries MPW/Shuttle run.
    1762646513213.pdf
    This government RFP, DMEA254-P001, seeks proposals for designing, developing, and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) using GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project addresses the current lack of monolithic 200-mm GaN-on-Si solutions for scaled integration of PAs and LNAs, leveraging GaN's superior physical properties over silicon. Phase I requires demonstrating feasibility through design, simulation, and assessment of the technology's integration impacts. Phase II involves the design, development, fabrication, and testing of functional LNA and PA prototypes by DMEA-accredited trusted suppliers, with deliverables including detailed reports, design collaterals, and samples to the U.S. Government. Phase III focuses on refining designs and integrating the technology into specific military applications like radar, communications, and electronic warfare, with opportunities for commercialization. Access to silicon space via a GlobalFoundries MPW/Shuttle run will be provided as Government Furnished Equipment.
    1762819318290.pdf
    This RFP seeks proposals for designing, developing, and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) using GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for military and commercial applications. The project aims to address the current lack of monolithic GaN-on-Si solutions for scaled integration in RF frontend (RFE) circuitry. Phase I focuses on feasibility, process evaluation, and design simulations, while Phase II involves fabricating and testing functional LNA and PA prototypes, with DMEA accreditation required for contractors. Phase III will focus on further refinement, integration into military applications, and commercialization opportunities. The project emphasizes leveraging GaN's superior physical properties for high output power and efficiency, leading to advancements in radar, communications, sensors, and electronic warfare.
    1762905704002.pdf
    This government RFP, DMEA254-P001, seeks proposals for the design, development, and demonstration of a low-noise amplifier (LNA) and power amplifier (PA) utilizing GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project addresses the current lack of monolithic 200-mm GaN-on-Si integrated solutions for PAs and LNAs, leveraging GaN's superior properties like high electron mobility, current density, wide bandgap, and breakdown voltage for improved RF performance and power efficiency. Phase I requires a feasibility study, design evaluation, and proposed development activities, including packaging and testing. Phase II involves the design, fabrication, and testing of functional LNA and PA prototypes by a DMEA-accredited Trusted Supplier, with deliverables including samples, test data, and design collateral to the USG. Phase III focuses on further refining designs and integrating the technology into specific military applications such as radar, communications, sensors, and electronic warfare, supporting USG validation and field deployment. The program emphasizes dual-use applications and requires contractors to make designed IP accessible to the Defense Industrial Base (DIB) or commercial partners with a licensing fee under $50k per instantiation.
    1762992130137.pdf
    This government RFP, DMEA254-P001, seeks proposals for designing, developing, and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) using GlobalFoundries' 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project addresses the current lack of monolithic 200-mm GaN-on-Si solutions for scaled integration of PAs and LNAs, leveraging GaN's superior physical properties for higher performance and efficiency compared to traditional silicon-based technologies. Phase I requires demonstrating feasibility through design, simulation, and assessment of the GaN-on-Si process, models, and components, along with proposing packaging and testing activities. Phase II involves DMEA-accredited contractors designing, fabricating, and characterizing functional LNA and PA prototypes that meet DMEA specifications for dual-use applications, with deliverables including detailed reports, design collaterals, and access to intellectual property. Phase III focuses on further refining designs and integrating the technology into specific military applications like radar, communications, and electronic warfare, supporting field use transition.
    1763078525698.pdf
    This government RFP, DMEA254-P001, seeks proposals for designing, developing, and demonstrating a low-noise amplifier (LNA) and power amplifier (PA) utilizing commercially available GlobalFoundries 200-mm Gallium Nitride on Silicon (GaN-on-Si) technology (130RFG1). The objective is to enhance output power density, linearity, and efficiency in radio communication systems for both military and commercial applications. The project addresses the current lack of monolithic 200-mm GaN-on-Si technology solutions for scaled integration of RF frontend (RFE) circuitry, leveraging GaN's superior physical properties for high output power and efficiency. Phase I requires demonstrating feasibility through design, simulation, and assessment of the GaN-on-Si technology, including design flow, architecture, and integration impacts. Phase II focuses on designing, fabricating, packaging, and testing functional LNA and PA prototypes, with specific performance requirements and delivery of design collaterals to the US Government. Phase III involves further refining designs and integrating the technology into military applications like radar, communications, sensors, and electronic warfare, with opportunities for commercialization.
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