Development of Versatile Wafer Probe System for High Power Devices
ID: DMEA241-002Type: BOTH
Overview

Topic

Development of Versatile Wafer Probe System for High Power Devices

Agency

Department of DefenseN/A

Program

Type: SBIRPhase: BOTHYear: 2024

Topic Link

https://www.sbir.gov/node/2479963

Additional Information

https://www.defensesbirsttr.mil/SBIR-STTR/Opportunities/
Timeline
    Description

    The Department of Defense (DOD) is seeking proposals for the development of a versatile wafer probe system for high power devices. The system must be able to handle high voltage up to 40 kV with a current of 10 A (500A pulsed) through a wafer chuck and probes. It should also offer a versatile environment, including a vacuum and a wide range of temperatures. The goal is to develop a system that can accurately and reliably measure various electrical parameters. The project will be conducted in two phases, with Phase I focusing on feasibility studies and Phase II involving the building and testing of a fully functional prototype. The final prototype will undergo rigorous testing to ensure its functionality and safety. The project has potential applications in industries such as automobiles, home appliances, power applications, aerospace, and defense. The development of this system will benefit both military and commercial industries in multiple areas. The solicitation is currently closed, and more information can be found on the DOD SBIR website.

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