4H-SiC Silicon Carbide (SiC) Integrated Circuit Processing on 100 mm Diameter SiC Wafers
ID: 80GRC025R7012SSType: Sources Sought
Overview

Buyer

NATIONAL AERONAUTICS AND SPACE ADMINISTRATIONNATIONAL AERONAUTICS AND SPACE ADMINISTRATIONNASA GLENN RESEARCH CENTERCLEVELAND, OH, 44135, USA

NAICS

Research and Development in the Physical, Engineering, and Life Sciences (except Nanotechnology and Biotechnology) (541715)

PSC

SPACE R&D SERVICES; SPACE FLIGHT, RESEARCH AND SUPPORTING ACTIVITIES; BASIC RESEARCH (AR11)

Original Source

https://sam.gov/opp/a53fd6d495a640238f14fd56da6f175e/view
Timeline
    Description

    NASA's Glenn Research Center is seeking information from potential sources for the fabrication of 4H-SiC Silicon Carbide (SiC) integrated circuit structures, specifically JFETs and resistors, on 100 mm diameter SiC wafers. The objective is to utilize a designated fabrication process flow to meet specific technical specifications using NASA-provided design files, with the completed wafers returned to NASA for further processing. These integrated circuits are crucial for developing prototype electronic systems capable of operating in extreme environments for NASA missions. Interested firms are invited to submit capability statements by April 21, 2025, to Claude David at claude.e.david@nasa.gov, referencing notice number 80GRC025R7012SS.

    Point(s) of Contact
    Claude David
    claude.e.david@nasa.gov
    Eric Hartman
    eric.t.hartman@nasa.gov
    Files
    No associated files provided.
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