Deep Reactive Ion Etching of Single Crystal 4H-SiC
ID: 80NSSC26921522QType: Special Notice
Overview

Buyer

NATIONAL AERONAUTICS AND SPACE ADMINISTRATIONNATIONAL AERONAUTICS AND SPACE ADMINISTRATIONNASA SHARED SERVICES CENTERSTENNIS SPACE CENTER, MS, 39529, USA

NAICS

Instruments and Related Products Manufacturing for Measuring, Displaying, and Controlling Industrial Process Variables (334513)

PSC

MISCELLANEOUS FABRICATED NONMETALLIC MATERIALS (9390)

Original Source

https://sam.gov/workspace/contract/opp/e39674a2b6544ed38dbc695b8d1e4280/view
Timeline
    Description

    NASA's National Aeronautics and Space Administration (NASA/NSSC) is seeking to procure Deep Reactive Ion Etching services for Single Crystal 4H-SiC, with the intention of issuing a sole source contract to BIOTRONICS, INC, the sole provider of this specialized service. The procurement involves fabricating a 4-inch, 350-micron thick wafer, which will be etched to create a 50-micron thick diaphragm, adhering to specific requirements for thickness uniformity and surface quality. This project is critical for advancing NASA's capabilities in materials processing and device fabrication, with performance expected at the NASA Glenn Research Center (GRC). Interested organizations may submit their capabilities and qualifications by 4:00 p.m. Central Standard Time on December 22, 2025, to Laura Quave at laura.a.quave@nasa.gov, as the government reserves the right to proceed with a sole source award based on the responses received.

    Point(s) of Contact
    laura quave
    (228) 813-6420
    laura.a.quave@nasa.gov
    Files
    Title
    Posted
    SATPC0040115 Tab 04 4 SOW.pdf
    This Statement of Work outlines the requirements for Deep Reactive Ion Etching of a single crystal 4H-SiC wafer. The project involves fabricating one 4-inch, 350-micron thick wafer, etched to 300 microns to create a 50-micron thick diaphragm. Specific requirements include a smooth diaphragm with minimal mask artifacts, ±5% thickness uniformity, smooth sidewalls free of scallops, a reasonable radius at the diaphragm base-sidewall intersection without notching or edge-wall trenching, and an aspect ratio of no less than 5. The etch recipe will be determined by the foundry. Additionally, the document mandates compliance with federal regulations regarding the use of Artificial Intelligence (AI) during contract performance and for the acquisition of covered AI systems or services, requiring disclosure and adherence to OMB memo M-25-22.
    SATPC0040115 Tab 07 Capability Statement Commercial.pdf
    NASA/NSSC intends to award a sole source contract to BIOTRONICS, INC for Deep Reactive Ion Etching of Single Crystal 4H-SiC. This procurement, operating under FAR 13.106-1(b)(1)(i), is justified by BIOTRONICS, INC being the sole provider of this specialized service. NASA/NSSC will manage the procurement, with performance at NASA/Glenn Research Center (GRC). The acquisition will follow FAR Part 12 and FAR Part 13 for commercial items and services, with NAICS Code 334513. Interested organizations can submit capabilities by December 22, 2025, to be considered for competitive procurement, though the government reserves the right to proceed with a sole source. Oral communications are not accepted. NASA Clause 1852.215-84 (Ombudsman) applies. The primary point of contact is Laura Quave.
    Lifecycle
    Title
    Type
    Deep Reactive Ion Etching of Single Crystal 4H-SiC
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