The Department of Defense (DOD) is seeking proposals for a Small Business Innovation Research (SBIR) program with a focus on the topic of "Hydrogenation for defect passivation in (Si)GeSn alloys". The objective of this research is to evaluate the improvement of background carrier concentration and minority carrier lifetime in (Si)GeSn semiconductor alloys through post-growth hydrogenation. The incorporation of Sn into Silicon or Germanium semiconductors reduces the bandgap and allows for tunability in the short- to mid-wave infrared wavelength spectrum. However, the short minority carrier lifetime and high background carrier concentration limit device performance. The challenge lies in the trade-off between low growth temperatures that introduce defects and higher growth temperatures that inhibit Sn incorporation. This topic aims to explore post-growth hydrogenation as a means to passivate defects and improve carrier concentration and minority carrier lifetime. The project will involve the development of a hydrogenation recipe and test plan in Phase I, followed by hydrogenation experiments and optimization in Phase II. If successful, the hydrogenation process may be commercialized and applied to other optoelectronic materials with non-optimal growth conditions. The project duration is not specified, but interested parties should submit their proposals by June 12, 2024. For more information, visit the solicitation agency's website at [link].