The Department of Defense (DOD) is seeking proposals for the development of Aluminum Nitride-Based Monolithic Microwave Integrated Circuits (MMICs). The goal of this solicitation is to leverage recent achievements in Aluminum Nitride (AlN) and Aluminum Gallium Nitride (AlGaN) to create commercializable AlN-based MMICs that outperform current state-of-the-art Gallium Nitride (GaN) MMICs for higher power/frequency applications. The research and development work will focus on establishing materials properties and fabrication routes for AlN-based devices, including the design and fabrication of resonators for microwave or RF circuits. The anticipated product is a fully integrated microwave circuit presented as a prototype.
The project will be conducted in three phases. In Phase I, the awardee will design and fabricate AlN-based microwave/mmWave resonators to extract the substrate's frequency-dependent material properties. In Phase II, the awardee will design, fabricate, and characterize AlN-based resonators up to 170 GHz, demonstrate substrate thinning and through substrate vias (TSV), and integrate waveguides with electronic elements aligned with the proposed application. In Phase III, the focus will be on the development of a truly integrated MMIC, including reliability testing/qualification and the production of a process design kit. The potential for technology transfer to military systems and civilian applications will also be explored.
The project duration is not specified in the document, but the solicitation is currently open, with a closing date of June 12, 2024. The funding specifics are not provided in the document. For more information and to submit a proposal, interested parties can visit the solicitation agency's website at https://www.defensesbirsttr.mil/SBIR-STTR/Opportunities/.