The Department of Defense, specifically the United States Air Force, is seeking innovative solutions for the development of an integrated photonic modulator on chip, as outlined in the SBIR opportunity number AF244-0006. The objective is to create a photonic modulator capable of operating over a wavelength range of 980 nm to 2.2 microns, with specifications including an RF bandwidth of at least 40GHz, a half wave voltage of less than 4.5 V, and an optical insertion loss of less than 4 dB, all integrated onto or within a silicon photonics chip. This technology is crucial for enhancing communication systems and sensing applications, as it will enable smaller, high-volume production at lower costs. The opportunity is currently open, with applications due by November 6, 2024. Interested parties can find more information and submit proposals through the official solicitation link at https://www.dodsbirsttr.mil/topics-app/.

## Description

Photonics can play a role in many applications, from tracking of objects to transmission of information to sensing the environment [1]. For these applications, the photonic components that are used dictate the overall performance of these systems. One of the key components is the photonic modulator. The photonic modulator is used to impart RF or Digital information onto the optical carrier in a communication system. For tracking or sensing, the photonic modulator can be used to create short, high fidelity optical pulses. Discrete photonic modulators have been used in these applications at optical wavelengths that range from 980nm out to 2.2 m with low half wave voltages, low optical insertion loss and high RF bandwidth [2]. Future systems will need to be smaller and produced in high volume at low cost. Realizing these systems on an integrated photonic chip will meet these needs. However, photonic modulators that operate with these parameters are not available on an integrated photonic chip. This SBIR will address this deficiency and produce an integrated photonic modulator that can be used on chip. The goal of this effort is to demonstrate an integrated photonic modulator chip which can operate over a wavelength range covering 980 nm to 2.2 m. The modulator should have an RF bandwidth of 40GHz with a half wave voltage of &lt;4.5 V while maintaining a &lt;4 dB optical insertion loss. It also must be integrated onto or within a silicon photonics chip. Approaches can include hybrid, heterogeneous, and monolithic integration to achieve a packaged photonic modulator. 

## Objective

This topic seeks to develop an integrated photonic modulator on chip which can operate over a wavelength range covering 980 nm to 2.2 microns. The modulator should have an RF bandwidth of at least 40GHz with a half wave voltage of &lt;4.5 V at 40 GHz while maintaining a &lt;4 dB optical insertion loss. It also must be integrated onto or within a silicon photonics chip. 

## Phase I

In this initial phase, device concepts will be developed, evaluated, and simulated. Different materials will be investigated to ensure they can meet the component performance goals. Technical risks will be identified, and reduction efforts will be implemented.

## Phase II

Prototype modulators will be fabricated and tested for performance specifications. A die or chip level photonic modulator will be produced that meets the specifications and is suitable for testing in AFRL labs.

## Phase III: Dual Use Applications

A fully packaged photonic modulator will be fabricated on a silicon photonic chip. The design will be transitioned to a partner fab for manufacturing at scale to meet future DoD demands.

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