Modeling, Optimization, and Monitoring of Thick SiC Epitaxy Processes Open Topic
ID: DMEA244-P01Type: BOTH
Overview

Topic

Modeling, Optimization, and Monitoring of Thick SiC Epitaxy Processes Open Topic

Agency

Agency: DODBranch: DMEA

Program

Type: SBIRPhase: BOTH

Topic Link

https://www.dodsbirsttr.mil/topics-app/

Additional Information

https://www.dodsbirsttr.mil/topics-app/
Timeline
    Description

    The Department of Defense, through the Defense Microelectronics Activity (DMEA), is seeking innovative solutions for the modeling, optimization, and monitoring of thick Silicon Carbide (SiC) epitaxy processes under the Small Business Innovation Research (SBIR) program. The objective is to develop a software solution that enables in-situ process characterization and real-time adjustments during the Chemical Vapor Deposition (CVD) of thick SiC epilayers, enhancing efficiency, reducing waste, and improving the quality of the deposited materials. This technology is crucial for advancing DoD capabilities and commercial applications, particularly in the development of ultra-high power SiC devices. Interested parties should note that the solicitation is currently closed, with the application due date having been September 10, 2024. For further details, please refer to the official solicitation page at https://www.dodsbirsttr.mil/topics-app/.

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