Advanced Single-Photon Avalanche Diode for 1030 nm (SPAD-1030)
ID: OSD233-004Type: BOTH
Overview

Topic

Advanced Single-Photon Avalanche Diode for 1030 nm (SPAD-1030)

Agency

Department of DefenseN/A

Program

Type: SBIRPhase: BOTHYear: 2023

Topic Link

https://www.sbir.gov/node/2448095

Additional Information

https://www.defensesbirsttr.mil/
Timeline
  1. 1
    Release Aug 23, 2023 12:00 AM
  2. 2
    Open Sep 20, 2023 12:00 AM
  3. 3
    Next Submission Due Oct 18, 2023 12:00 AM
  4. 4
    Close Oct 18, 2023 12:00 AM
Description

The Department of Defense (DoD) is seeking proposals for the topic "Advanced Single-Photon Avalanche Diode for 1030 nm (SPAD-1030)" as part of their SBIR 23.3 BAA. The research objective is to develop a single-photon avalanche detector optimized for mm-accurate multi-kHz satellite and lunar laser ranging at 1030 nm. The current SLR/LLR receive-detector technology relies on gated, large-area Si-based single-pixel sensors operating at 532 nm. However, operating at 1030/1064 nm offers advantages such as improved eye safety and better atmospheric transmission. The aim of this effort is to design and develop a single-photon detector (single pixel, or array) optimized for 1030 nm SLR/LLR applications. The solicitation provides notional specifications for the detector's performance metrics. The project will be conducted in three phases: Phase I involves trade study and design, Phase II focuses on fabrication and integration of an engineering development unit, and Phase III involves final design, fabrication, and performance characterization of six prototype units. The project duration and funding specifics are not provided in the document. For more information, refer to the solicitation link on SBIR.gov.

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