Available for Licensing: High-Quality Actinide Thin Films via Molecular Beam Epitaxy for Quantum and Optoelectronic Devices
ID: BA-1441Type: Special Notice
Overview

Buyer

ENERGY, DEPARTMENT OFENERGY, DEPARTMENT OFBATTELLE ENERGY ALLIANCE–DOE CNTRIdaho Falls, ID, 83415, USA

NAICS

Semiconductor and Related Device Manufacturing (334413)

PSC

GENERAL SCIENCE AND TECHNOLOGY R&D SERVICES; GENERAL SCIENCE AND TECHNOLOGY; APPLIED RESEARCH (AJ12)

Original Source

https://sam.gov/workspace/contract/opp/f4ef2ce742cd43ce93a865bffd970ce5/view
Timeline
    Description

    The Department of Energy is offering a licensing opportunity for high-quality actinide thin films produced via molecular beam epitaxy (MBE), specifically targeting applications in quantum and optoelectronic devices. This innovative process developed by researchers at Idaho National Laboratory (INL) allows for the precise deposition of epitaxial crystalline thin films of uranium and thorium, which are crucial for advancing theoretical and experimental research in complex electron correlations and next-generation computing technologies. The successful integration of these high-quality thin films with existing semiconductor technology presents significant potential for advancements in various high-tech applications, including quantum computing and optoelectronics. Interested parties can reach out to Javier Martinez at javier.martinez@inl.gov for further details regarding this opportunity.

    Point(s) of Contact
    Javier Martinez
    javier.martinez@inl.gov
    Files
    No associated files provided.
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