High Voltage and Current Silicon-Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for Fast Turn-On Current Applications
STTR Opportunity Analysis
The Department of the Navy is seeking STTR proposals to develop advanced silicon-carbide (SiC) MOSFETs for high-power microwave systems, with the goal of improving size, weight, and power while enabling very high-voltage, high-current switching. Phase I calls for a conceptual design, modeling, and tradespace assessment, while Phase II calls for delivery of optimized MOSFETs and a technical data package for integration and testing with government pulse-generator prototypes. The work emphasizes single-wafer blocking voltage above 10 kV, pulsed current capability above 5 kA, turn-on times under 30 ns, low-inductance packaging, thermal management, EMI mitigation, and operational lifetime evaluation. The solicitation is open under number DON26TZ01-NV019, and the application due date is June 3, 2026 at 4:00 PM UTC; Phase II proposes delivery of 10 units.