High Voltage and Current Silicon-Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for Fast Turn-On Current Applications

The DON26TZ01-NV019 project seeks the development of advanced silicon carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) for high power microwave (HPM) systems. The objective is to create MOSFETs with improved size, weight, and power (SWaP) characteristics, capable of blocking voltages over 10 kV and pulsed current densities greater than +/- 5 kA (10 kA ideal), with turn-on times in tens of nanoseconds and low jitter. This initiative aims to overcome limitations of current commercial off-the-shelf (COTS) devices by providing single-wafer solutions or vertically stacked packaged arrays, minimizing gate charge and resistance for efficient operation. Phase I focuses on conceptual design, modeling, and tradespace assessment, while Phase II involves the delivery of optimized MOSFETs and a technical data package. Phase III envisions dual-use applications in counter-electronics, ultra-wideband radar, high-power jammers, alternative energy, power distribution, and automotive sectors.