Bulk growth of InAsP crystal
ID: AF252-D029Type: BOTH
Overview

Topic

Bulk growth of InAsP crystal

Agency

Agency: DODBranch: USAF

Program

Type: SBIRPhase: BOTH

Topic Link

https://www.sbir.gov/topics/11922

Additional Information

https://www.dodsbirsttr.mil/submissions/solicitation-documents/active-solicitations
Timeline
    Description

    The Department of Defense, specifically the U.S. Air Force, is seeking proposals for the development of bulk growth of InAsP crystal as part of its Small Business Innovation Research (SBIR) program. The primary objective is to create high optical quality, compositionally uniform wafers of the ternary semiconductor alloy InAsP, with dimensions of approximately 20 to 25 mm in cross-section and over 1 mm in thickness, to be used in sensitive infrared detectors for shortwave infrared applications. This initiative is crucial as there are currently no commercial suppliers for bulk ternary alloy InAsP, and establishing a domestic supply source is vital for the Air Force's operational needs. Proposals are due by May 21, 2025, and interested parties can find more information at the provided source link: https://www.sbir.gov/topics/11922.

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