Aluminum Scandium Nitride and Aluminum Scandium Nitride/Gallium Nitride Epitaxial Technology for RF Devices
ID: AF254-D0810Type: Phase II
Overview

Topic

Aluminum Scandium Nitride and Aluminum Scandium Nitride/Gallium Nitride Epitaxial Technology for RF Devices

Agency

Agency: DODBranch: USAF

Program

Type: SBIRPhase: Phase II

Topic Link

https://www.dodsbirsttr.mil/topics-app/

Additional Information

https://www.dodsbirsttr.mil/topics-app/
Timeline
    Description

    The Department of Defense, specifically the United States Air Force, is seeking proposals for the development of aluminum scandium nitride (AlScN) and aluminum scandium nitride/gallium nitride (AlScN/GaN) epitaxial technology aimed at enhancing next-generation radio frequency (RF) devices. The objective is to establish a growth system and process capable of producing high-quality AlScN layers with a scandium concentration greater than 18%, which is essential for advancing RF transistor technology that meets the demands of future radar and communication systems. This initiative is critical for achieving improved spectral dominance, range, and efficiency in military applications. Interested parties should note that the solicitation is currently in pre-release, with the open date set for May 28, 2025, and the application due date on June 25, 2025. For more information, please visit the official source link at https://www.dodsbirsttr.mil/topics-app/.

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