Radiation Hardened Gallium Nitride Electronics

The Department of Defense (DoD), specifically the Navy branch, is seeking proposals for the development of radiation-hardened Gallium Nitride (GaN) electronics, aimed at enhancing power and RF device performance for mission-critical applications. The primary objective is to characterize GaN materials and devise techniques for creating radiation-hardened GaN High-Electron Mobility Transistor (HEMT) devices and integrated circuits, addressing the challenges posed by radiation exposure, particularly in space and military environments. This initiative is crucial for ensuring the reliability of electronics used in harsh conditions, such as space missions and systems near nuclear reactors. Interested parties must be U.S.-owned and operated, capable of maintaining a secret-level facility, and submit their proposals by February 5, 2025, following the release of the solicitation on January 8, 2025. For more details, visit the official source link at DoD SBIR.