The Department of Defense (DoD) is seeking proposals for the topic of "Specialized Crystal Growth and Material Characterization" as part of the SBIR 23.3 BAA. The objective of this topic is to develop innovative crystals that are transparent in the vacuum ultraviolet (VUV) region of the electromagnetic spectrum and can host thorium dopants. The crystals should have a concentration of 1016-1017 thorium atoms per cubic centimeter and can be either thorium doped into CaF2 and/or thorium doped into MgF2. The ability to produce both CaF2 and MgF2 crystals is preferred. The crystals must transmit VUV light down to at least 140 nm with >99% bulk transmission, requiring very low levels of impurities. The topic also encourages exploration of other large bandgap crystals.
In Phase I, proposers must demonstrate a proof-of-concept for growing/developing a crystal that is transparent in the VUV region and able to host radioactive dopants. They must also show the ability to grow low-impurity VUV crystals, purify the material, and characterize the crystal properties. Phase II involves demonstrating and developing a method to grow crystals from a small amount of dopant, as well as developing a method for sectioning and polishing the crystals. The proposers must verify methods for ascertaining the amount of thorium dopant, the ability to handle thorium isotopes, and the capability to deliver thorium doped crystals. Prototype crystals with specific dimensions and surface polish must be provided.
In Phase III, the knowledge gained in Phase II should be applied to grow and distribute the specialized doped material for the DoD and other interested partners. A manufacturing plan for a smooth transition is ideal. The solicitation is closed, and more information can be found on the DoD SBIR 23.3 BAA page on grants.gov.