Bulk growth of InAsP crystal
SBIR Opportunity Analysis
The U.S. Air Force, through DoD SBIR topic DAF26BZ02-DV012, seeks to develop a domestic source of high optical quality, compositionally uniform bulk InAsP wafers for short-wave infrared detector applications. The work calls for growing ternary semiconductor crystals that can produce wafers about 20 to 25 mm across and more than 1 mm thick, with several crack- and twin-free wafers yielded from each crystal boule. Key technical goals include strong compositional uniformity, minimal defects, desired band gap energy, and methods to prevent alloy segregation during growth, and the topic is restricted under ITAR and EAR with foreign national disclosure required. The topic is in pre-release, opens May 27, 2026, and closes June 24, 2026 at 4:00 PM.