Bulk growth of InAsP crystal

The Department of the Air Force is seeking a Direct-to-Phase-II SBIR effort to establish a domestic source of high optical quality, compositionally uniform InAsP wafers for short-wave infrared detector applications. The work focuses on growing ternary semiconductor wafers in different alloy compositions and delivering 20 to 25 mm cross-section material that is more than 1 mm thick, with crack- and twin-free crystals, high uniformity, and minimal defects. Important context includes ITAR and EAR export-control restrictions, disclosure of any foreign national participation, and an expectation that applicants already have prior experience in bulk ternary alloy crystal growth; success also depends on preventing alloy segregation and achieving the desired band gap and optical performance. The solicitation is DAF26BZ02-DV012, and applications are due by 2026-06-24 16:00 UTC.