Bulk growth of InAsP crystal

The Department of the Air Force is seeking proposals under this Direct-to-Phase-II SBIR opportunity to establish a domestic supply source for high optical quality bulk ternary alloy InAsP crystals. Awardees must develop and deliver compositionally uniform, crack-free, and twin-free InAsP semiconductor wafers measuring 20 to 25 mm in cross-section dimensions and above 1 mm in thickness. Key technical requirements include preventing alloy segregation during crystal growth, achieving targeted band gap energy, and ensuring the wafers have minimal defects to support short-wave infrared detector applications. Because this is a Direct-to-Phase-II topic, applicants must submit documentation of a prior Phase I-type feasibility effort demonstrating experience in growing bulk ternary alloy crystals. The solicitation opens on May 27, 2026, and applications must be submitted by June 24, 2026.