Aluminum Scandium Nitride and Aluminum Scandium Nitride/Gallium Nitride Epitaxial Technology for RF Devices
ID: AF254-D0810Type: BOTH
Overview

Topic

Aluminum Scandium Nitride and Aluminum Scandium Nitride/Gallium Nitride Epitaxial Technology for RF Devices

Agency

Agency: DODBranch: USAF

Program

Type: SBIRPhase: BOTH

Topic Link

https://www.sbir.gov/topics/12040

Additional Information

https://www.dodsbirsttr.mil/submissions/solicitation-documents/active-solicitations
Timeline
    Description

    The Department of Defense, specifically the U.S. Air Force, is seeking proposals for the development of aluminum scandium nitride (AlScN) and aluminum scandium nitride/gallium nitride (AlScN/GaN) epitaxial technology aimed at enhancing radio frequency (RF) devices. The objective is to create a growth system and process that can produce high-quality AlScN and AlScN/GaN structures, which are critical for next-generation RF transistors that require higher current, lower losses, and the ability to operate at elevated temperatures. This technology is vital for advancing Air Force radar and communications systems, ensuring improved spectral dominance and efficiency. Interested parties must submit their proposals by June 25, 2025, with the opportunity being open for applications starting May 7, 2025. For more details, refer to the solicitation at SBIR.gov.

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