On-Chip Modulator for Cryogenic Electro-Optic (EO/IR) Sensors
ID: N252-113Type: BOTH
Overview

Topic

On-Chip Modulator for Cryogenic Electro-Optic (EO/IR) Sensors

Agency

Agency: DODBranch: NAVY

Program

Type: SBIRPhase: BOTH
Timeline
    Description

    The Department of Defense, specifically the Navy, is seeking innovative solutions through the SBIR program for the development of an on-chip modulator designed for cryogenic electro-optic and infrared (EO/IR) sensors. The objective is to create a photonic integrated circuit (PIC)-compatible optical modulator that can operate stably at cryogenic temperatures (77K-120K), enabling high-speed modulation and integration with advanced EO/IR sensor systems. This technology is crucial for overcoming bandwidth limitations of conventional copper interconnects, thereby enhancing the performance of military sensors and potentially benefiting applications in quantum sensing, free space optical communication, and electromagnetic warfare. The solicitation is currently in pre-release, with the open date set for April 23, 2025, and applications due by May 21, 2025. For further details, interested parties can visit the official source link at https://www.dodsbirsttr.mil/topics-app/.

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