Aluminum Scandium Nitride and Aluminum Scandium Nitride/Gallium Nitride Epitaxial Technology for RF Devices
ID: AF252-D003Type: BOTH
Overview

Topic

Aluminum Scandium Nitride and Aluminum Scandium Nitride/Gallium Nitride Epitaxial Technology for RF Devices

Agency

Agency: DODBranch: USAF

Program

Type: SBIRPhase: BOTH

Topic Link

https://www.sbir.gov/topics/11898

Additional Information

https://www.dodsbirsttr.mil/submissions/solicitation-documents/active-solicitations
Timeline
    Description

    The Department of Defense, specifically the U.S. Air Force, is seeking proposals for the development of aluminum scandium nitride (AlScN) and aluminum scandium nitride/gallium nitride (AlScN/GaN) epitaxial technology aimed at enhancing radio frequency (RF) devices. The objective is to create a growth system and process capable of producing high-quality AlScN layers with a scandium concentration greater than 18%, which are essential for next-generation RF transistors that will improve radar and communication systems. This technology is critical for achieving higher current, lower losses, and improved reliability in RF devices, which are vital for maintaining spectral dominance in military applications. Proposals are due by May 21, 2025, and interested parties can find more information and submit their applications through the provided link: SBIR Topic.

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