SBIRPre-Release

AUTOMATED PROCESS FOR CODESIGN OF RADIATION HARDENING AND SECURITY

Solicitation ID26.BZ
Agency
DOD
DARPA
Deadline
Jun 24, 2026
45 days left
Posted Date
May 6, 2026
Classification
SBIR
Phase: BOTH

SBIR Opportunity Analysis

DARPA, within the Department of War, is seeking SBIR proposals to develop manufacturable mixed-signal integrated circuit technology that can operate reliably at temperatures up to 800°C. The work centers on advancing wide-bandgap semiconductor approaches into a scalable fabrication process, with Phase I focused on modeling, simulation, and experimental validation of an amplifier and ring oscillator, and Phase II aimed at demonstrating an ADC and maturing wafer fabrication. Key performance targets include high-temperature operation, an amplifier with DC gain above 20 dB and unity gain bandwidth greater than 1 MHz, a ring oscillator with propagation delay under 500 ns, and an ADC with more than 10,000 samples per second, 8-bit resolution, under 1 W power, and SNR above 40 dB. Phase I is a 6-month effort and Phase II is anticipated to run up to 36 months, with emphasis on reliability, manufacturability, and scalability for defense, aerospace, energy, and dual-use applications. The opportunity is pre-release, with release on May 6, 2026, opening on May 27, 2026, and applications due June 24, 2026 at 4:00 p.m. EDT under solicitation DPA26BZ02-NV009.

SBIR Documents

1 Files
1778457814222.pdf
PDF66 KBMay 11, 2026
AI Summary
DARPA and the Department of War are soliciting proposals for the Small Business Innovation Research (SBIR) opportunity DPA26BZ02-NV009, focused on developing manufacturable mixed-signal integrated circuit (IC) technology capable of reliable operation at temperatures up to 800°C. This initiative addresses the limitations of current silicon-based technologies in extreme thermal environments, which are critical for defense, aerospace, and energy applications like missile guidance, geothermal monitoring, and space missions. The project aims to advance wide-bandgap materials like silicon carbide (SiC) and gallium nitride (GaN) to achieve high-speed, stable, and manufacturable ICs for sustained operation in harsh conditions. Phase I, a 6-month effort, focuses on demonstrating the feasibility of mixed-signal IC design and fabrication through modeling and simulation, with experimental validation of an amplifier and ring oscillator at 800°C. Phase II, anticipated for up to 36 months, will involve demonstrating an Analog-to-Digital Converter (ADC) capable of stable operation at 800°C with specific performance metrics and maturing the wafer fabrication process. Phase III will focus on commercializing the product for military and private sector markets, assessing and improving operating lifetime, and finalizing a Process-Design Kit (PDK) for standardized fabrication.

Related SBIR/STTR Opportunities

Opportunity Snapshot

Source SystemOfficial Link
Program Type
SBIR - BOTH
Agency
DOD / DARPA

Key Dates

Release DateMay 6, 2026
Open DateMay 27, 2026
Application DueJun 24, 2026
Close DateJun 24, 2026