AUTOMATED PROCESS FOR CODESIGN OF RADIATION HARDENING AND SECURITY
SBIR Opportunity Analysis
DARPA, within the Department of War, is seeking SBIR proposals to develop manufacturable mixed-signal integrated circuit technology that can operate reliably at temperatures up to 800°C. The work centers on advancing wide-bandgap semiconductor approaches into a scalable fabrication process, with Phase I focused on modeling, simulation, and experimental validation of an amplifier and ring oscillator, and Phase II aimed at demonstrating an ADC and maturing wafer fabrication. Key performance targets include high-temperature operation, an amplifier with DC gain above 20 dB and unity gain bandwidth greater than 1 MHz, a ring oscillator with propagation delay under 500 ns, and an ADC with more than 10,000 samples per second, 8-bit resolution, under 1 W power, and SNR above 40 dB. Phase I is a 6-month effort and Phase II is anticipated to run up to 36 months, with emphasis on reliability, manufacturability, and scalability for defense, aerospace, energy, and dual-use applications. The opportunity is pre-release, with release on May 6, 2026, opening on May 27, 2026, and applications due June 24, 2026 at 4:00 p.m. EDT under solicitation DPA26BZ02-NV009.