The Department of Defense, specifically the Army, is seeking proposals for the Small Business Innovation Research (SBIR) program focused on the development of electronic quality ferroelectric III-Nitride epitaxy for device heterostructures. The objective is to create single crystalline epitaxial thin films and heterostructures of group III-IIIb-Nitride thin films that are scalable to 4-inch diameter wafer sizes or larger, which are essential for high-performance electronic and photonic applications. This initiative is significant as it aims to enhance the manufacturing capabilities of ferroelectric III-Nitride devices, potentially leading to advancements in electronic memory and high-temperature electronic circuits. The solicitation is currently closed, with the application due date having been set for July 30, 2024. For more information, interested parties can visit the official SBIR website at https://www.dodsbirsttr.mil/topics-app/.